王冲 | 论文效实 | 正西服置电儿子科技父亲学

   

  [1]Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area,Solid-State Electronics,2017 ,2,Vol.129,

  [2]Effects of Ohmic Area Etching on Buffer Breakdown Voltage of AlGaN/GaN HEMT,TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS,2017. Vol.18, No.3

  [3] Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electronmobility transistor with oxygen-containing plasma treatment,Applied Physics Express 10, 056502 (2017)

  [4] Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP,IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 10, OCTOBER 2017

  [5] Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses,Applied PhysicsLetters,2015,Vol.107,No. 6

  [6] Photoresponse and traps characteristics of transparent AZO-gated AlGaNGaN HEMT,Chinese Physics B,2016,Vol.25, No.10

  [7]Low ohmic-contact resistance in AlGaN_ GaN high electron mobility transistors with holes etching in ohmic region,ELECTRONICS LETTERS,2015. Vol.51, No.25, pp:2145

  [8]Effects of annealing on Schottky characteristics in AlGaN/GaN HEMT with transparent gate electrode,Chinese Physics Letters,2014,Vol.31, No.12, pp.128501,

  [9]Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT,Chinese Physics Letters,2014,Vol.31, No.3, pp:038501

  [10]AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO,Chinese Physics B,2013,Vol.22, No.6, pp:068503

  [11] AlGaN_GaN副异质结F流入增强大号高电儿子迁移徙比值晶体管,物理学报,2016. Vol.65, No.3, pp:038501

  [12] AlGaN/GaN HEMTs with 0.2um V-gate recesses for X-band application,半带体学报,2012,Vol.33, No.3,034003

  [13] Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs,半带体学报,2014,Vol.35, No.1,014008